2
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
II (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 66 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 400
μAdc)
VGS(th)
1.4
2.1
2.9
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 1000 mAdc, Measured in Functional Test)
VGS(Q)
2.2
2.9
3.7
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 2.8 Adc)
VDS(on)
0.15
0.2
0.35
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
1.3
?
pF
Output Capacitance
(VDS
=
28
Vdc ±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
410
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
343
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1000 mA, P
out
= 39 W Avg. W-CDMA, f = 940 MHz,
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21
23
dB
Drain Efficiency
ηD
30.5
32.3
?
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
6.1
6.4
?
dB
Adjacent Channel Power Ratio
ACPR
?
-39.5
-38
dBc
Input Return Loss
IRL
?
-15
-9
dB
1. Part internally matched both on input and output.
(continued)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRFE6S9160HSR5
MOSFET RF N-CH 35W 28V NI-780S
MRFE6S9200HSR5
MOSFET RF N-CH 58W 28V NI-880S
MRFE6S9201HSR5
MOSFET RF N-CH 40W 28V NI-780S
MRFE6S9205HSR5
MOSFET RF N-CH 58W 28V NI-880S
MRFE6VP5600HR5
FET RF LDMOS DUAL 230MHZ NI1230
MRFE6VP61K25HSR6
MOSFET RF N-CH 1.25KW NI-1230S
MRFE6VP6300HSR3
FET RF N-CH 230MHZ 125V NI780S-4
MRFE6VP8600HSR6
RF FET LDMOS 50V NI1230S
相关代理商/技术参数
MRFE6S9160HR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9160HR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9160HSR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9160HSR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HSR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HSR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray